Contact lithography

Contact lithography

When you see this page, if you have limited knowledge of this lithography method, please read this article to choose the processing method that best suits you.

Comparison of contact lithography, stepper lithography, laser direct writing, electron beam lithography, and nanoimprint lithography

Principle:

Through the optical projection system, the pattern is irradiated onto the photoresist, causing chemical changes in the photoresist, making it soluble in the solvent. The photoresist area in a specific area is removed, thereby transferring the pattern on the mask to the wafer. The ratio of the pattern on the mask to the pattern on the photoresist layer is 1:1.

Processing Capability:

• Machine:EVG 620NT

• Substrate size: small piece/2/4/6 inches

• Supports double-sided alignment and bonding alignment

• Minimum line width: 0.8 μm

• Light intensity uniformity: ≤3%

• Front alignment accuracy: ≤0.5 μm

• Back alignment accuracy: ≤1 μm