OMedaSemi Provide Low Loss Silicon Nitride on insulator wafer ,we use LPCVD+Annealing to fabricate low loss silicon nitride film wafer .
if you are new about the fabrication process of Silicon nitride film for photonics application ,please see following paper . now in most Fab , they use lpcvd+annealing to get low loss silicon nitride film ,for example ligentec lionix and cumec ,also some foundry develop a novel pecvd process(SiD4+N2 ) to get low loss silicon nitride film to do direct hetergenous integration with lithium niobate ,for example AMF and Tower.
If you are interesting in the Silicon Nitride Process and fabrication ,i recommend you read the paper of Tobias Kippenberg Team of EPFL and USBC Team ,they showed a lot of process details.
Also we can promise our wafer is qualified and not bad ,but if you want to get ultra low loss silicon nitride wafer , you also need develop your etching process ,clad deposition and annealing process ,also cmp process to finish total silicon nitride waveguide fabrication.
Also we can also provide 6 inch DUV Min CD 180nm and EBL silicon nitride waveguide fabrication service ,if you want to know more ,please click here : 6Inch Wafer level Silicon Nitride Waveguide fabrication
Related Papaer:
ICP-CVD--Anneal-free ultra-low loss silicon nitride integrated photonics.pdf
Thin film optical data: (for your convenience in waveguide simulation)
Refractive Index and Absoption Data of Si3N4-SiO2-Si .xlsx
Inventory list:
In order to facilitate teachers' purchases, we have prepared stocks for various specifications, Mainly 6 inches
As you can see in the following sheet ,we mainly provide SINOI wafer with 3um oxide ,if you do silicon nitride waveguide for gycroscope or resonator application ,we can also provide silicon nitride wavguide wafer with 4.7um 8um and 15um oxide layer
Processing technology:
LPCVD process
PECVD process:
Attention
Thick silicon nitride films require special attention when handling due to the presence of internal stress.
1. First, special attention should be paid to the clamping of wafers and small pieces. It is best to use tweezers with softer heads. The clamping points should be as far as possible from the outside of the wafer or the four corners of the small pieces, away from the center. The clamping points may cause film rupture due to stress.
2. Film cleaning. There is protective glue on the split small pieces. It is positive and not exposed. Therefore, it is recommended to use ordinary cleaning, such as acetone and IPA to remove it. It is not recommended to use longterm heating cleaning methods such as RCA or NMP. After acetone and IPA degumming, if there is any residue, a short-term hot piranha or O2 plasma can be used without ultrasound. There is no protective glue on the surface of the wafer, so it is generally not necessary to clean it. It can be handled by yourself according to the subsequent process, but attention should be paid to stress problems. Improper operation may cause film fragmentation.
3.Annealing If annealing is required, it is best to perform structural treatment before annealing. Direct annealing may also cause film rupture.
Note: The outside of the wafer stress release groove and the periphery of the small piece are generally normal loss
areas due to clamping
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
