Furnace annealing and rapid thermal annealing (RTA) are two common heat treatment processes, mainly used in semiconductor manufacturing and materials science. Their main differences are heating rate, temperature control and processing time.
Furnace Annealing
#0: 2000 degrees Celsius - Annealing furnace for defect repair
Support size: 6 inches, 8 inches
Wafer thickness: less than 1350um
Maximum heating temperature: 2000℃
Maximum heating rate:
Temperature uniformity: ±1%
Heating rate:
Process gas path: N2, Ar
Substrate: Diamond, 4H-SIC, Poly-SIC, SOI, lithium niobate, lithium tantalate, Sapphire, silicon, etc.
#: Annealing furnace
Support size: 4, 6 inches
Wafer thickness: less than 1350um
Maximum heating temperature: 1050℃
Maximum heating rate:
Temperature uniformity: ±1%
Heating and cooling rate:
Process gas path: N2, Ar
Substrate: Diamond, 4H-SIC, Poly-SIC, SOI, lithium niobate, lithium tantalate, Sapphire, silicon, etc.
Rapid Thermal Annealing (RTA)
Processing capability:
Supported size: 4-8 inches
Equipment capability:
Maximum heating temperature: 1300℃
Maximum heating rate: 150℃/s
Temperature uniformity: ±1%
Process gas path: N2, O2, Ar
Ultimate vacuum: 4x10-2mbar
| Temperature | Max Maintain time |
| 1250°C | 60s |
| 1200°C | 3min |
| 1100°C | 5min |
| 1000°C | 20min |
| 900°C | 100min |
| <=800°C | 150min |
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
