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6/8 inch DUV Stepper lithography



We provide 150nm DUV Stepper lithography service, machine brand and model is Canon FPA-3030EX6, this machine is designed and fabricated by Canon .

its min linewidth is 150nm, and can be used in the high volume production. This equipment has fully automatic spinning, developing and exposing functions and can process 20 pcs 6 inch wafer in one hour. it is an amazing speed and can greatly reduce the cost of lithography and improve the efficiency of lithography .


Processing Capability:

• Machine brand:• Canon FPX-3030-EX6

• Substrate size: 4/6/8 inch

• Minimum line width: 150 nm

• Mask scaling ratio: 5:1

• Alignment accuracy: ≤40 nm

• Focus accuracy: ≤100 nm

• Step accuracy: ≤20 nm

Project that we did




No

Item 

Description


1

Tool

Lithography machine model

Canon FPA-3030EX6

2

Zoom ratio

5:01


3

Exposure light source

248nm DUV (KrF excimer laser)


4

Mask

SPEC

6025

5

Material

quartz


6

Size

6inch(151600 μm to 152400 μm)


7

Thickness

0.25" (6250 μm to 6450 μm) )


8

Flatness

Chrome surface within 0.5um


9

Bevel

within 500um


10

Pellicle 

SPEC

Select 248nmDUV specification (different from i-line material)

11

Frame Inner diameter

120000(+200,-0)um x 146000(+200,-0)um


12

Frame Outside diameter

124000(+0,-200)um x 150000(+0,-200)um


13

Frame Width

2000um


14

Frame Height

6300±250um


NOTE:

Alignment Mark (essential for overlay): Canon lithography machine alignment mark, including coarse alignment TVPA mark and fine alignment AGA mark;

Each layer that needs to be overlaid requires at least one set of TVPA and AGA marks, and AGA is recommended to be XY8;

Mark positions are as shown in the right figure, placed at the E, E’, F, and F’ positions of the scribe;

Overlay mark is used to measure overlay accuracy, as shown in the right figure, green is the current layer, and blue is the previous layer (it can be omitted if it is not used to measure overlay accuracy)

Marks between different layers should not overlap. (Stepper alignment does not require the mask and wafer marks to be aligned)

The distance between all marks needs to be kept above 250um.

Only one set of the same type of mark is needed for the same layer.

20P4 mark needs to have both Y mark and X mark.




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About Us

OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.

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