Low Loss SINOI Wafer

OMedaSemi Provide Low Loss Silicon Nitride on insulator wafer ,we use LPCVD+Annealing to fabricate low loss silicon nitride film wafer .

if you are new about the fabrication process of Silicon nitride film for photonics application ,please see following paper . now in most Fab , they use lpcvd+annealing to get low loss silicon nitride film ,for example ligentec lionix and cumec ,also some foundry develop a novel pecvd process(SiD4+N2 ) to get low loss silicon nitride film to do direct hetergenous integration with lithium niobate ,for example AMF and Tower. 

If you are interesting in the Silicon Nitride Process and fabrication ,i recommend you read the paper of Tobias Kippenberg Team of EPFL and USBC Team ,they showed a lot of process details. 

Also we can promise our wafer is qualified and not bad ,but if you want to get ultra low loss silicon nitride wafer , you also need develop your etching process ,clad deposition and annealing process ,also cmp process to finish total silicon nitride waveguide fabrication.

Also we can also provide 6 inch DUV Min CD 180nm and EBL silicon nitride waveguide fabrication service ,if you want to know more ,please click here : 6Inch Wafer level Silicon Nitride Waveguide fabrication

Related Papaer:

PVD+Annealing Low-Temperature Sputtered Ultralow-Loss Silicon Nitride for Hybrid Photonic Integration.pdf

PECVD+CMP+Annealing Ultra-Low-Loss Silicon Nitride Photonics Based on Deposited Films Compatible with Foundries.pdf

LPCVD+Annealing Foundry manufacturing of tight-confinement dispersion-engineered, ultralow-loss silicon nitride photonic integrated circuit.pdf

ICP-CVD--Anneal-free ultra-low loss silicon nitride integrated photonics.pdf

Thin film optical data: (for your convenience in waveguide simulation)

ZJ-300nm-SINOI -LPCVD+Annealing-0718-SiN on SiO2-(1)(1).txt

ZJ-200nm-LPCVD+Annealing-SIN.txt

ZJ-400nm-LPCVD+Annealing-SIN.txt

Inventory list:

In order to facilitate teachers' purchases, we have prepared stocks for various specifications, Mainly 6 inches

As you can see in the following sheet ,we mainly provide SINOI wafer with 3um oxide ,if you do silicon nitride waveguide for gycroscope or resonator application ,we can also provide silicon nitride wavguide wafer with 4.7um 8um and 15um oxide layer

Processing technology:

LPCVD process

PECVD process:

Attention 

Thick silicon nitride films require special attention when handling due to the presence of internal stress.

1. First, special attention should be paid to the clamping of wafers and small pieces. It is best to use tweezers with softer heads. The clamping points should be as far as possible from the outside of the wafer or the four corners of the small pieces, away from the center. The clamping points may cause film rupture due to stress. 

2. Film cleaning. There is protective glue on the split small pieces. It is positive and not exposed. Therefore, it is recommended to use ordinary cleaning, such as acetone and IPA to remove it. It is not recommended to use longterm heating cleaning methods such as RCA or NMP. After acetone and IPA degumming, if there is any residue, a short-term hot piranha or O2 plasma can be used without ultrasound. There is no protective glue on the surface of the wafer, so it is generally not necessary to clean it. It can be handled by yourself according to the subsequent process, but attention should be paid to stress problems. Improper operation may cause film fragmentation.

3.Annealing If annealing is required, it is best to perform structural treatment before annealing. Direct annealing may also cause film rupture. 

Note: The outside of the wafer stress release groove and the periphery of the small piece are generally normal loss

areas due to clamping

Application of silicon nitride thin film substrates in photonic integrated circuits

Si3N4, or silicon nitride, has various applications in photonics due to its unique properties and advantages:

Ultra-low optical loss: Si3N4 exhibits low optical loss (1dB/m) over a wide wavelength range from the visible spectrum to the mid-infrared (MIR) region. This property makes it suitable for use in a variety of optical components and devices where ultra-low signal attenuation is critical.

Transparent in a wide spectral range: Si3N4 is transparent in the spectral range from visible light to MIR (400-2350nm), allowing operation in an ultra-wide spectral range. This transparency enables its use in applications that require the manipulation of light across different wavelengths.

Compatibility with complementary metal oxide semiconductor (CMOS) processes: Si3N4 can be integrated with CMOS processes to facilitate its incorporation into existing semiconductor manufacturing technologies. This compatibility simplifies the manufacturing process and facilitates the development of integrated photonic circuits.

Compatible with high-power optical systems: Si3N4 has excellent thermal and mechanical properties, allowing it to be used in high-power optical applications without significant degradation. This property is critical for applications involving high-intensity light sources or light amplification.

Can be used to manufacture a variety of devices: Si3N4 can be used to manufacture various photonic devices, including waveguides, resonators, filters, modulators and detectors. Its versatility in device design and fabrication makes it suitable for a variety of photonics applications.

Easy integration with other materials: Si3N4 can be integrated with other materials such as silicon (Si) and III-V semiconductors to enable the development of hybrid photonic devices with enhanced functionality.

Overall, Si3N4’s combination of low optical loss, spectral transparency, compatibility with CMOS processes, compatibility with high-power optical systems, device fabrication versatility, and integration potential with other materials make it an ideal candidate for a variety of photonic applications. An ideal platform for scientific applications, including telecommunications, sensing, spectroscopy, imaging and quantum technology.

Current status of global supply of silicon nitride thin film substrates

Silicon nitride, lithium niobate, and silicon photonics are currently the three major waveguide platforms. Lithium niobate and silicon photonics use thin film lithium niobate wafers and SOI wafers respectively. There are stable commercial companies in these two product markets. And stable supply, SOI suppliers include Shanghai Xinao, French SOITEC, thin film lithium niobate wafer suppliers include Jinan Jingzheng, etc. At present, the main way for everyone to obtain Si3N4 optical waveguide substrates is from foreign tape-out platforms, etc. Unit acquisition, there are not many commercialized, technologically mature companies or units in China to facilitate domestic scientists to conduct research on silicon nitride photonic integrated circuits. The chips provided by foreign companies are expensive and have extremely long delivery times. After-sales service, The time difference, etc. are very inconvenient. This situation has greatly restricted the development and application of domestic silicon nitride photonic integrated circuit technology, and also greatly reduced the development efficiency. Usually, it often takes several months for a product to go from substrate to finished device. time.

Our solutions--Thin film and thick film substrate supply

In response to the current difficulties encountered in the development of domestic silicon nitride photonic integrated circuits, we have joined forces with the Hangzhou Huaxin Optoelectronics Technology Team and based on the Hangzhou Huaxin Optoelectronics Technology Team’s years of technology accumulation in ultra-low loss silicon nitride optical waveguide substrates, we have launched 2- The solution for 6-inch thick film (800nm) and thin film ultra-low loss (1dB/m) silicon nitride film substrates has solved the supply problem of ultra-low loss silicon nitride optical waveguide substrates for the majority of companies and scientists.

Advantage 1. Mature and strong technical support

The technical team is the Hangzhou Huaxin Optoelectronics technical team, which has many years of experience in the manufacture of ultra-low loss (1dB/m) silicon nitride optical waveguide substrates. At the same time, it has published many papers and mastered the KNOW-HOW technology for the manufacture of ultra-low loss silicon nitride optical waveguide substrates, including PECVD/LPCVD, rapid annealing/furnace annealing, CMP, etc., and has in-depth research on process details.

In addition, it also has mature mastery of LPCVD+furnace annealing and PECVD+CMP+furnace annealing processes, and can provide thin film Si3N4 and thick film Si3N4 (800nm) manufacturing processes at the same time

Advantage 2. Abundant silicon nitride thin film wafer inventory

Based on Hangzhou Huaxin Optoelectronics' many years of technology and scientific research accumulation in the manufacture of ultra-low loss silicon nitride optical waveguide substrates, we can provide a variety of 2-8 inch spot standard products for you to choose from, and we also have a dicing production line to cut them into small pieces for you.

Advantage 3. Super fast delivery

The full set of processing technology for our ultra-low loss silicon nitride optical waveguide substrates is completed in mainland China. The manufacturing process of the full set of processes ranges from thermal oxidation to PECVD/LPCVD to CMP and furnace annealing, and the full set of process time is 10-15 days.

Advantage 4. Diverse services for customization and mass production

For sample customers: We provide PECVD+CMP+furnace annealing solutions, with one piece produced each time, and the initial sample price investment is low.

For the mass production stage: We provide LPCVD+furnace annealing solutions, with 25 pieces produced each time, and the comprehensive unit price is low.