We provide customers with electron beam lithography processing services. We have two equipment options: JEOL JBX-9500FS and EUIONIX-ELS-G100. In addition to electron beam lithography, we can also provide a full range of processing services. You only need to provide the layout. After receiving the layout, we will conduct project review, quote, and then process.
Application: diffraction waveguide/grating, superstructure, silicon nitride/lithium niobate/silicon waveguide, other nanostructures
Project Processing--Diffractive waveguide and superstructure
Project Processing--silicon light/lithium niobate/silicon nitride waveguide processing
Processing Capabilities:
Supported electron beam photoresists: PMMA, HSQ, ZEP
Equipment 1 model: JEOL JBX-9500FS
Processing accuracy:
Acceleration voltage: 100KV
Exposure resolution: 10nm
Overlay accuracy: 10nm
Field stitching accuracy: 10nm
Write field size: 1mm*1mm
Scanning frequency: 100MHZ
Acceptable substrate size: 1cm*1cm 2cm*2cm 2 inches 3 inches 4 inches 6 inches
Equipment 2 model: EUIONIX-ELS-G100
Processing accuracy:
Acceleration voltage: not less than 100 kV
Exposure resolution: 6nm
Overlay accuracy: 20nm
Field stitching accuracy: 15nm
Write field size: 1mm*1mm
Scanning frequency: 100MHZ
Acceptable substrate size: 1cm*1cm 2cm*2cm 2 inches 3 inches 4 inches 6 inches
Principle:
Electron beam lithography (often abbreviated to electron beam lithography or EBL) is the practice of scanning a focused electron beam to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposure). The electron beam changes the solubility of the resist, selectively removing the exposed or unexposed areas of the resist by immersing it in a solvent (development). As with photolithography, the goal is to create very small structures in the resist, which are subsequently transferred to a substrate material, usually by etching.
The main advantage of electron beam lithography is that it can draw custom patterns with a resolution of less than 10 nm (direct write). This form of maskless lithography has high resolution but low throughput, limiting its use to photomask manufacturing, small-batch production of semiconductor devices, and research and development.
The basic principle of electron beam lithography is to use a high-energy electron beam to write patterns directly on a photosensitive material. The specific steps include:1. Electron beam generation: The electron gun generates a high-energy electron beam, usually using a thermal emission or field emission electron gun. 2. Beam focusing: The electron beam is focused to the nanometer level through the electromagnetic lens system. 3. Beam scanning: The movement of the electron beam is controlled by the scanning coil, and a predetermined pattern is scanned and exposed on the photosensitive material. 4. Photosensitive material reaction: The electron beam interacts with the photoresist (such as positive or negative photoresist) to change the solubility of the photoresist.
Process flow:
1. Substrate preparation: Clean and process the substrate to be etched (such as silicon wafers, glass, etc.), and apply a layer of photoresist.
2. Exposure: In the electron beam lithography system, the desired pattern is formed by controlling the electron beam to scan on the photoresist.
3. Development: Place the exposed photoresist in the developer to dissolve the unexposed (or exposed) area to form a pattern.
4. Etching: Perform an etching process (such as RIE or wet etching) on the developed sample to transfer the pattern to the substrate.
5. Photoresist removal: After etching, remove the remaining photoresist to obtain the final structure.
Application scenarios: Electron beam lithography is widely used in the following fields: Integrated circuit manufacturing: used to make high-precision fine patterns and features. Nanotechnology: such as the production of nanostructures such as nanowires and nanodots. Optoelectronic devices: such as the preparation of optical structures such as waveguides and gratings. Microelectromechanical systems (MEMS): used for precision machining of microstructures. Research and development: suitable for high-resolution research projects and the development of new materials.
Advantages: High resolution: The electron beam has a short wavelength and can achieve sub-nanometer resolution, which is suitable for making extremely small nanostructures. Pattern flexibility: No mask is required, and any complex pattern can be directly written through computer control. High precision: High positioning accuracy, good repeatability, suitable for precision machining.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
