Processing Capabilities:
Material: Si3N4 (silicon nitride), SiO2 (silicon oxide), α-silicon (amorphous silicon),TEOS SiO2
Size: 2-8 inches
Machine: 1 pcs/ time for sample or 25 pcs/time for mass production
Principle:
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a method that uses plasma to enhance the chemical vapor deposition process. It achieves the deposition of thin films at lower temperatures, making it suitable for the deposition of temperature-sensitive substrates and various materials. PECVD technology is widely used in semiconductor manufacturing, optoelectronic devices, solar cells, protective coatings and other fields.
Process flow:
1. Reaction gas supply:
Reaction gases (such as silane SiH₄, ammonia NH₃, oxygen O₂, etc.) are introduced into the reaction chamber.
2. Plasma generation:
Plasma is generated in the reaction chamber by a radio frequency (RF) power supply or a microwave power supply. High-energy electrons dissociate the reaction gas into active species (such as free radicals, ions, atoms), which participate in the deposition reaction.
3. Deposition reaction:
Under the action of plasma, active species react chemically on the surface of the substrate to form a solid film and deposit on the substrate. Due to the high energy of plasma, the deposition temperature can be greatly reduced (usually between 100°C and 400°C).
4. Byproduct emission:
Byproducts in the deposition process usually exist in the form of gas and are removed through the exhaust system.
Advantages:
Low temperature deposition: It can achieve thin film deposition at a lower temperature, which is suitable for temperature-sensitive materials and devices.
High deposition rate: Compared with other chemical vapor deposition methods, PECVD has a higher deposition rate.
Good uniformity: Large-area, uniform thin film deposition can be achieved.
Diverse materials: It is suitable for the deposition of a variety of materials, including oxides, nitrides, carbides, etc.
High film quality: The deposited film has good adhesion, density and high purity.
Know more about our Coating Capbility
| Material | EBE | magnetron Sputtering | IBS | PECVD | ICPCVD | LPCVD | ALD | PLD | MOCVD | MBE |
| Au | O | O | ||||||||
| Ag | O | O | ||||||||
| Ta | O | |||||||||
| Al | O | O | ||||||||
| Cu | O | |||||||||
| Fe | O | |||||||||
| Mo | O | |||||||||
| Ti | O | O | ||||||||
| Ni | O | O | ||||||||
| W | O | |||||||||
| Ge | O | |||||||||
| Ir | O | |||||||||
| Zr | O | |||||||||
| Pt | O | O | ||||||||
| Cr | O | O | ||||||||
| NiCr | O | |||||||||
| TiW | O | |||||||||
| WC | O | |||||||||
| C | O | |||||||||
| NiSn | O | |||||||||
| AgSn | O | |||||||||
| AuSn | O | O | ||||||||
| MoS2 | O | |||||||||
| Ta2O5 | O | O | ||||||||
| TiO2 | O | O | O | |||||||
| GaO | O | |||||||||
| Ga2O3 | O | |||||||||
| Al2O3 | O | O | ||||||||
| IZO | O | |||||||||
| IGZO | O | |||||||||
| ITO | O | |||||||||
| CeO | O | |||||||||
| HfO2 | O | O | ||||||||
| NiO | O | |||||||||
| ZrO2 | O | O | O | |||||||
| Y2O3 | O | |||||||||
| WO3 | O | |||||||||
| MgO | O | O | O | |||||||
| GaN | O | |||||||||
| AlScN | O | |||||||||
| AlN | O | |||||||||
| TiN | O | |||||||||
| SiNX | O | O | ||||||||
| Si3N4 | O | O | O | |||||||
| SiC | O | |||||||||
| SiON | O | |||||||||
| Poly Si | O | |||||||||
| α Si | O | O | O | |||||||
| TEOS Sio2 | O | O | ||||||||
| SrTiO3 | O | |||||||||
| BaTiO3 | O | |||||||||
| MgF2 | O |
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
