Processing capabilities:
Material:
SiO2 (silicon oxide),
Si3N4 (silicon nitride),
Poly Si (polycrystalline silicon),
TEOS SiO2 (tetraethoxysilane)
Size: 2-12 inches
Equipment capacity: 25 pieces per furnace, 50 pieces per furnace
Principle:
Low-pressure chemical vapor deposition (LPCVD) is a commonly used thin film deposition technology, which is usually used in the manufacture of microelectronic devices such as transistors, solar cells, and display devices. This technology involves introducing gaseous precursor compounds into the reaction chamber and performing chemical reactions at lower pressures and temperatures, so that the desired material is deposited on the substrate surface in the form of a thin film. This method can control the thickness and uniformity of the deposition, and can achieve uniform deposition on complex structures.
Process flow:
1. Gas supply: The gaseous precursor compound is transported to the reaction chamber through the gas supply system.
2. Pyrolysis: The gaseous precursor compound is heated in the reaction chamber to undergo a pyrolysis reaction and decompose into active species or atoms.
3. Surface reaction: The decomposed active species or atoms react chemically on the substrate surface to form a thin film of solid material.
4. Deposition: The formed solid material is deposited on the substrate surface to form the desired thin film structure.
Applications:
1. Transistor manufacturing: In integrated circuit manufacturing, LPCVD is used to deposit insulating layers, metal conductors, polycrystalline silicon and other materials.
2. Solar cells: Used to deposit photovoltaic materials such as amorphous silicon, silicon nitride, etc. to improve the efficiency of solar cells.
3. Display devices: In the manufacture of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs), it is used to deposit transparent conductive films, brightness enhancement layers, etc.
Advantages:
1. Good uniformity: It can achieve uniform deposition on a larger substrate surface, so that the manufactured devices have better performance and consistency.
2. Deposition control: The thickness, composition and structure of the deposition can be precisely controlled to meet the requirements of different devices.
3. Low-temperature deposition: Compared with other deposition technologies, LPCVD is usually carried out at a lower temperature, which is beneficial to protect the substrate and improve the performance of the device.
4. High-purity materials: Since it is carried out under gas phase conditions, high-purity deposition materials can be obtained, reducing the impact of impurities on device performance.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
