Gallium Nitride Wafers and Epitaxial Wafers
We can provide gallium nitride epitaxial wafers and gallium nitride single crystal substrates.
Epitaxial wafers:
GaN epitaxial wafers on silicon (up to 8 inches)
GaN epitaxial wafers on sapphire (up to 6 inches)
Application: Micro Led
4inch LED(Red) GaN on Sapphire epitaxial Product.pdf
4inch LED(Blue) GaN on Sapphire epitaxial Product.pdf
4inch LED(Green) GaN on Sapphire epitaxial Product.pdf
GaN epitaxial wafers on silicon carbide (up to 6 inches)
GaN epitaxial wafers on diamond (up to 2 inches)
Single crystal substrates:
Undoped GaN substrates (up to 6 inches)
Silicon doped GaN substrates (up to 6 inches)
Magnesium doped GaN substrates (up to 6 inches)
Applications:
GaN-based RF devices
GaN-based HEMTs
GaN-based LEDs
GaN-based visible light lasers
Basic principles:
Gallium nitride (GaN) single crystal substrates and epitaxial wafers are important materials in the semiconductor industry, especially in high-power electronic and optoelectronic devices. Understanding their basic principles and types is essential for material science and device manufacturing.
1. Gallium nitride single crystal substrate:
Single crystal substrate is a single crystal made of gallium nitride material, which is used to grow epitaxial layers on its surface.
Manufacturing method: Gallium nitride single crystal substrates are usually prepared by hydrogenated vapor phase epitaxy (HVPE) or metal organic chemical vapor deposition (MOCVD). These methods deposit gallium nitride single crystals on substrates through chemical reactions.
2. Gallium nitride epitaxial wafer:
Epitaxial wafer is a multilayer structure formed by depositing gallium nitride thin films on single crystal substrates by epitaxial growth methods.
Epitaxial growth: Epitaxial growth usually uses MOCVD or molecular beam epitaxy (MBE) technology to deposit one or more layers of high-quality gallium nitride thin films on single crystal substrates. The lattice structure and chemical composition of these films match the substrate material.
Types:
1. Types of gallium nitride single crystal substrates:
Undoped gallium nitride substrate: pure gallium nitride material, commonly used in devices such as high electron mobility transistors (HEMTs) and laser diodes (LDs).
Doped GaN substrate: The electrical properties of the material are adjusted by doping specific elements (such as silicon and magnesium). For example, n-type silicon-doped GaN substrates are used to make high electron mobility devices, and p-type magnesium-doped GaN substrates are used to make LEDs.
2. Types of GaN epitaxial wafers:
GaN-based LED epitaxial wafers: usually include a layer of n-type GaN, a layer of light-emitting layer (InGaN or AlGaN) and a layer of p-type GaN, used to make LEDs.
GaN-based power device epitaxial wafers: include a layer of high-quality GaN layer and an AlGaN/GaN heterojunction structure, used to make high electron mobility transistors (HEMTs).
GaN-based laser epitaxial wafers: include multi-layer quantum well structures and doped GaN layers, used to make laser diodes (LDs).
Epitaxial technology:
1. Metal organic chemical vapor deposition (MOCVD):
Principle: Gallium nitride thin films are deposited on substrates by reacting metal organics (such as trimethyl gallium) and ammonia at high temperatures.
Advantages: high-quality thin film, good thickness and composition control, suitable for large-area growth.
2. Molecular beam epitaxy (MBE):
Principle: Under high vacuum conditions, gallium nitride thin film is deposited on the substrate by molecular beams of nitrogen source and gallium source.
Advantages: precise thickness control and atomic-level interface quality, suitable for research and development of high-performance devices.
Applications:
High-power electronic devices: such as HEMT, power amplifiers and switching devices.
Optoelectronic devices: such as LED, LD, UV detectors and photovoltaic devices.
Sensors: sensors under high temperature, high frequency and radiation environments.
In summary, gallium nitride single crystal substrates and epitaxial wafers play an important role in modern semiconductor technology. Through different preparation and epitaxial technologies, gallium nitride devices of different types and applications can be realized.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
