LNOI Wafer

OMedaSemi  can provide 4-inch and 8-inch LNOI wafers and LN-SOI

We provide 4-8 inch LNOI wafers (thin-film lithium niobate), which use surface activated bonding technology to bond thermal oxide wafers and X-lithium niobate crystal wafers together, and then control the thickness to the thickness you need through ion implantation, annealing, thinning or direct thinning and CMP polishing. It is worth noting that ion implantation and direct CMP and thinning have their own advantages and disadvantages. We provide customers with a variety of LNOI products.

Also we are developing 6inch LTOI(lithium tantalate) wafer.

Application:

SAW surface acoustic wave device--POI wafer

TFLN PIC thin film lithium niobate photonic integrated circuit--LNOI wafer

Size: 4 inches 6 inches 8 inches

Crystal Orientation: X cut (for TFLN PIC), Y cut-Y128, Y36 (SAW), Z cut (SAW),LN-SOI

Processing technology: hydrophilic bonding + annealing, surface activation bonding

Customized processing: In addition to standard LNOI wafers, we also provide customized processing services for LNOI wafers.

Our advantages: full process and comprehensive processing capabilities

* Ion implantation

* Thinning and polishing

* Surface activation bonding

* Hydrophilic bonding

* Annealing

* Ultra-high precision TRIM polishing

Comprehensive processing capabilities can provide you with fast and efficient customized processing services.

Case 1: X-cut 300nm LN-4.7umSiO2-525umSi

Crystal Orientation:X cut

Average film thickness/A:3083

Thickness range/A:288

TTV/μm:3.21

LTV/μm:1.31

BOW/μm:-0.16

Warp/μm:12.56

Ra/nm:-.173

Surface Picture:

Thickness Range:

Roughness:

TTV:

BOW&WRAP:

Case 2: Y128 cutting 500nm LN-3um SiO2-525um SiCrystal Orientation:X cut

Average film thickness/A:5047.1

Thickness range/A:90.2

TTV/μm:1.77

LTV/μm:0.37

BOW/μm:-0.64

Warp/μm:13.5

Ra/nm:0.168

Surface Picture:

Thickness Range:

Roughness:

TTV:

BOW&WRAP:

Case 3: LN-SOI