Contact lithography

Contact lithography

Principle:

Through the optical projection system, the pattern is irradiated onto the photoresist, causing chemical changes in the photoresist, making it soluble in the solvent. The photoresist area in a specific area is removed, thereby transferring the pattern on the mask to the wafer. The ratio of the pattern on the mask to the pattern on the photoresist layer is 1:1.

Processing Capability:

• Machine:EVG 620NT

• Substrate size: small piece/2/4/6 inches

• Supports double-sided alignment and bonding alignment

• Minimum line width: 0.8 μm

• Light intensity uniformity: ≤3%

• Front alignment accuracy: ≤0.5 μm

• Back alignment accuracy: ≤1 μm