ion implantation

Ion implantation

Principle:

Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target material, thereby changing the physical, chemical, or electrical properties of the target material. Ion implantation is used in semiconductor device manufacturing and metal finishing, as well as in materials science research. If the ions stop and remain in the target, they can change the elemental composition of the target (if the composition of the ions is different from that of the target). Ion implantation also causes chemical and physical changes when the ions hit the target at high energy. High-energy collision cascades can damage or even destroy the crystal structure of the target, and ions with sufficiently high energy (tens of mega-electron volts) can cause nuclear transmutation.

Ion_implanter_schematic

Capabilities:

Size: 0-12 inches

Material: Any

Thickness: Less than 1.3mm

Others: 5~250keV; H, He, P etc.

Applications:

Doping

Fabrication of silicon-on-insulator SOI wafers