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Integrated Thin-Film Lithium Niobate Mid-Infrared Modulator.pdf
The paper demonstrates the development of an integrated, high-speed modulator using lithium niobate on sapphire (LNOS) for mid-infrared (MIR) applications. This modulator operates in the 3.95–4.3 µm wavelength range, showing impressive electro-optic performance. It features a half-wave voltage-length product (VπL) of 22 V·cm, a 3 dB bandwidth of over 20 GHz, and an extinction ratio of 34 dB, which is nearly two orders of magnitude better than previous integrated MIR modulators. It can also achieve data transmission at 10 Gbit/s.
The device uses a Mach–Zehnder interferometer architecture and is based on thin-film lithium niobate (LN) integrated onto sapphire. The integration of high confinement waveguides and thermo-optic electrodes contributes to the device’s excellent performance. Notably, it achieves π-phase modulation in the MIR, a key milestone for integrated photonics.
The modulator’s capabilities include generating an 80 GHz frequency comb and maintaining effective operation up to 4.3 µm. The work opens pathways for using the modulator in applications like telecommunications, sensing, and quantum technologies. These results also highlight the potential for energy-efficient MIR photonic systems, marking a significant step forward in the field of integrated MIR photonics.
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