"Low-Dissipation Nanomechanical Devices Fabricated from Monocrystalline Silicon Carbide"

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Low-Dissipation Nanomechanical Devices Fabricated from Monocrystalline Silicon Carbide.pdf

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OMedaSemi develop 4-6 inch SICOI wafers (silicon carbide on insulator wafers). The wafers use Direct Bonding(hydropholic bonding) or surface activated bonding technology to bond thermal oxide wafers and 4H high-purity semi-insulating silicon carbide wafers together, and then control the thickness to the thickness you need through ion implantation, annealing, thinning or direct thinning and CMP polishing. It is worth noting that ion implantation and direct CMP and thinning have their own advantages and disadvantages.