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LTOI Wafer--Copper Damascene Process-Based High-Performance Thin Film Lithium Tantalate Modulators

Date: 2025-05-30 10:59:36     Hits: 69

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Copper Damascene Process-Based High-Performance Thin Film Lithium Tantalate Modulators.pdf

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The paper titled "Copper Damascene Process-Based High-Performance Thin Film Lithium Tantalate Modulators" introduces a novel approach for integrating high-performance electro-optic (EO) modulators based on lithium tantalate (LiTaO3) thin films using the copper Damascene process. This technique, typically used in semiconductor manufacturing, allows for the creation of low-loss electrodes and enables efficient chip-on-wafer bonding, which is essential for tight integration with electronics.

The work highlights the fabrication of modulator devices featuring lower microwave losses (around 10%) compared to conventional gold electrode-based designs. The copper Damascene process provides a flat surface and low resistivity electrodes, which improve the overall performance of the modulators. These devices demonstrated high-speed data transmission capabilities, with transmission rates of 416 Gbit/s for PAM4 and 540 Gbit/s for PAM8, maintaining a low bit error ratio below the 25% SD-FEC threshold.

The paper emphasizes the scalability and integration potential of these modulators for next-generation electro-optic integrated circuits (EO PICs), offering a pathway to high-performance, low-cost manufacturing. Furthermore, the copper-based electrodes enable efficient microwave transmission and offer compatibility with standardized fabrication processes, making them suitable for large-scale commercial production. The study's results show that the copper Damascene process improves both the electro-optic modulation properties and the integration potential for future high-capacity optical communication systems.



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