Paper Download
SAW_Filters_on_LiNbO3_SiC_Heterostructure_for_5G_n77_and_n78_Band_Applications.pdf
OMedaSemi can provide diverse composite X-o-X Wafer, we use surface actived bonding technology to bond diverse material . you can click this page to know our composite wafer and our surface actived bonding technology
The article titled "SAW Filters on LiNbO3/SiC Heterostructure for 5G n77 and n78 Band Applications" presents research on the design and implementation of spurious-free surface acoustic wave (SAW) filters tailored for the 5G n77 (3300-4200 MHz) and n78 (3300-3800 MHz) frequency bands. Key points include:
1. **Purpose**: To address the growing demand for high-performance filters in 5G communication, particularly for the challenging n77 and n78 bands, by improving the bandwidth and operating frequencies of RF filters.
2. **Materials and Structure**: The filters utilize an X-cut LiNbO₃ (LN) film on a silicon carbide (SiC) substrate, chosen for its high phase velocity and good thermal properties. The combination improves the coupling and frequency performance while suppressing unwanted Rayleigh and transverse modes.
3. **Results**: The SAW filters achieved center frequencies of 3763 MHz and 3560 MHz, with bandwidths of 24.8% and 15.6%, respectively. The spurious-free performance was realized by optimizing the LN thickness and using tilted interdigital transducers (IDTs) set at a 24° angle, which helped eliminate unwanted modes.
4. **Fabrication**: A straightforward process using direct bonding and lithography techniques was employed, making the design scalable for commercial applications.
5. **Conclusion**: This work demonstrates that LiNbO₃/SiC heterostructure SAW filters are promising candidates for high-performance, wideband 5G filters, especially for the n77 and n78 bands.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
