Atomic layer deposition coating SiN -- Selective ALD of SiN using SiI4 and NH3: Effects of temperature, plasma treatment, and oxide substrate

In the semiconductor industry, silicon nitride (SiN) thin films have many key applications, such as sidewall/gate spacer layer 1, encapsulation layer 2, and charge trapping layer. Compared with chemical vapor deposition, atomic layer deposition (ALD) has better shape preservation at lower substrate temperatures. So far, only chlorosilane has been reported as the Si precursor for SiN thermal ALD. Among them, the thermal ALD study of silicon tetrachloride (SiCl4) and NH3 is the most in-depth, among which * SiClx (x=1, 2 or 3) and * NHx (x=1 or 2) have been proven to be reactive surface substances after SiCl4 and NH3 pulses, respectively. Although silicon tetraiodide (SiI4) has not been reported in the literature for depositing SiN films, it has been tested in the semiconductor industry. The dissociation energy of Si halogen bonds is 68 kcal/mol, which is much lower than that of Si Cl bonds (110 kcal/mol). Therefore, SiI4 may have higher reactivity than SiCl4 at lower temperatures. This article investigates the initial growth process of SiN on four oxide substrates by ALD using SiI4 and NH3: SiO2 (natural SiO2 on Si), single crystal sapphire, ALD Al2O3 (TMA and H2O), and ALD ZrO2 (ZrCl4 and H2O). This article discusses the effects of temperature, NH3 plasma treatment, and oxide type on the nucleation of SiN.

Background:

1. Silicon nitride materials are widely used in integrated photonics, MEMS, and other semiconductor chips.

2. Atomic layer coating deposition of silicon nitride has excellent shape retention, and compared to CVD and PVD, it can be deposited more uniformly on the surface of the structure

We provide our customers with wafers (silicon wafers, glass wafers, SOI wafers, GaAs, sapphire, silicon carbide (conductive, non insulating), Ga2O3, diamond, GaN (epitaxial wafers/substrates)), coating methods (PVD, CVD, Ald, PLD), and materials (Au Cu Ag Pt Al Cr Ti Ni SiO2 TiO2 Ti3O5), Ta2O5,ZrO2,TiN，ALN,ZnO,HfO2。。 More materials), bonding (quartz quartz bonding, sapphire sapphire bonding) photolithography, high-precision mask templates, epitaxy, doping, electron beam direct writing and other products and processing services (please contact our editor for our wafer standard inventory list to accelerate your scientific experiments).

EBL OEM, 4-inch 6-inch 8-inch DUV150nm coating exposure and development processing (amorphous silicon, TiO2, SiO2, GaN, Ta2O5, Al, Au, GaAs (PCSEL) More material systems, master plate production, chrome plate sales, nanoimprinting, DUV lithography superstructure services,

Simulation design of visible light near-infrared band superlens

Please contact the editor for free to obtain the original text, and we also welcome exchanges on the semiconductor industry, processes, technology, and market development!