This paper introduces a novel 150 mm single-crystal 4H/3C-SiC engineered substrate that significantly improves the performance of low-voltage SiC devices. The engineered substrate, formed by transferring a high-quality 4H-SiC template onto a 3C-SiC substrate using surface-activated bonding and ion-cutting techniques, achieves a remarkable resistivity of 0.39 mΩ·cm, which is more than 45 times lower than conventional 4H-SiC substrates.
The key advantages of this engineered substrate include its ultra-low resistivity, reduced thermal boundary resistance (TBR), and minimal defect density. Schottky barrier diodes (SBDs) fabricated on this substrate show an impressive 47% reduction in specific on-resistance (Ron,sp) and a 20% increase in surge current tolerance compared to devices on standard 4H-SiC substrates. The substrate also demonstrates excellent electrical and thermal performance, enabling the fabrication of highly efficient low-voltage SiC power devices.
The authors also address challenges associated with 3C-SiC, which offers lower resistivity but suffers from poor crystalline quality. By integrating 4H-SiC with 3C-SiC, the engineered substrate maintains high material quality while leveraging the low resistivity of 3C-SiC, making it a promising platform for next-generation SiC power electronics, particularly in low-voltage applications.
In summary, the study highlights the potential of the 4H/3C-SiC engineered substrate in enhancing the performance of low-voltage SiC devices, offering a scalable solution for future SiC-based power electronics.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.