This paper introduces a radiation-hardened 35-μm-thick silicon carbide (SiC) film-type lateral drift detector (SCDD), designed for high-resolution single-photon X-ray spectroscopy and profiling high-energy transients. The device incorporates a unique mechano-chemical hybrid polishing technique to produce SiC substrates with exceptional surface quality (roughness of ~0.197 nm), facilitating high-performance fabrication. A major innovation is the integration of a lateral drift chamber architecture that monolithically combines photoelectric conversion and signal processing.
Key advancements of the SCDD include the use of double-side processing (DSP), which eliminates the geometric shadowing and electromagnetic crosstalk common in traditional single-side-processed SiC detectors. The device features ultra-low leakage current (40 fA), minimal junction capacitance (0.6 pF at 40 V), and low integrated noise charge, significantly improving the sensitivity and response speed compared to traditional detectors.
The SCDD is demonstrated to have a fast transient response (861.1 ps) and excellent single-photon time resolution (132 ns), making it ideal for photon-counting X-ray spectroscopy. The device also shows promising results in energetic transient profiling, able to mimic gamma-ray bursts with millisecond-level duration.
Fabrication of the SCDD includes precise doping with Al³⁺ to optimize charge collection, along with a novel lateral drift electric field for efficient charge transport. A detailed TCAD simulation of the SCDD further validates its design, showing a well-formed drift field that enhances charge collection across the entire active area. Additionally, the SCDD’s performance was benchmarked against traditional PIN photodiodes, with the new device outperforming in key metrics such as leakage current, capacitance, and response speed.
In conclusion, this research presents a robust, radiation-hardened SiC-based detector that excels in single-photon X-ray detection and high-energy transient profiling, with applications in areas like astrophysics and radiation detection.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.