Main Function: Determines the depth of ion implantation.
Physical Relationship: The higher the acceleration energy of the ions, the stronger their penetration ability. The average projection range (Rp) is positively correlated with energy.
Mass Effect: At the same energy, ions with smaller atomic masses (e.g., B) implant deeper than ions with larger atomic masses (e.g., As), because lighter ions move faster and can penetrate deeper into the material.
Main Function: Determines the total number of implanted ions and the doping concentration.
Physical Relationship: Dose is defined as the number of ions per unit area (atoms/cm²). The dose determines the total area under the impurity concentration curve, affecting the peak concentration.
Independence: In basic physical models, dose only affects the concentration peak's height and does not change the depth (Rp) of the peak.
Main Function: Adjusts the depth distribution of ions and addresses negative effects caused by lattice structure.
Tilt Angle: Typically set around 7° to avoid lattice channeling effects and prevent ions from unintentionally penetrating the substrate too deeply.
Twist Angle: Ensures uniform force distribution in all directions of the wafer during tilted implantation, preventing doping non-uniformity caused by shadow effects.
Comprehensive Outcome: The final physical result, mainly controlled by energy and stabilized by angle adjustments.
Distribution Form: In an ideal state without channeling effects, the concentration distribution follows a Gaussian distribution, with the peak concentration occurring at a certain depth.
| Parameter | Physical Control Object | Effect on Depth | Effect on Concentration |
|---|---|---|---|
| Energy | Projection Range (Rp) | Primary control factor: higher energy means deeper implantation | No direct impact on concentration |
| Dose | Doping Concentration (Peak) | No direct impact on depth | Primary control factor: higher dose means higher concentration |
| Angle | Distribution Consistency/ Stability | Correction factor: eliminates channeling effects, ensures controlled depth | Affects lateral distribution and local uniformity |
Low-Energy High Current: For manufacturing ultra-shallow junctions (USJ) at the 3nm/2nm nodes, energies below 1keV are used to achieve nanometer-level depth control.
Pre-Amorphization (PAI): Heavy ions (such as Ge or C) are implanted first to damage the surface lattice, followed by implantation of functional ions. This process, combined with angle adjustments, ensures more precise control over depth distribution and eliminates uncertainty.
OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.
