Towards Manufacturing Large Area GaN Substrates from QST® Seeds

Poly ALN-SiO2-SI Wafer--Towards Manufacturing Large Area GaN Substrates from QST® Seeds

Date: 2025-04-13 18:56:21 Hits: 56

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Towards Manufacturing Large Area GaN Substrates from QST® Seeds.pdf

The paper titled "Towards Manufacturing Large Area GaN Substrates from QST® Seeds" discusses recent advancements in the production of large-area Gallium Nitride (GaN) substrates, focusing on the use of Qromis Substrate Technology (QST®) seeds. The authors explore the application of Hydride Vapor Phase Epitaxy (HVPE) for growing thick crystalline GaN on 150 mm QST® seeds, which are then processed to create freestanding 100 mm diameter GaN substrates. These developments are crucial for addressing the industry's demand for large-diameter GaN substrates, which are needed for high-performance GaN-based devices used in areas such as power electronics and optoelectronics.

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Key points include:

Challenges with Non-native Substrates: The paper highlights the challenges posed by current non-native substrates (such as sapphire and silicon) used for GaN growth, which cause lattice mismatches leading to defects in GaN films.
QST® Technology: Qromis' QST® technology provides a thermal expansion match with GaN, facilitating the growth of thicker GaN layers on large diameter substrates. This makes it suitable for producing high-quality, freestanding GaN substrates.
Manufacturing Process: The process involves growing GaN via HVPE on QST® substrates, followed by a seed removal technique that results in freestanding GaN crystals. The crystals are then subjected to wafering, grinding, cutting, and polishing to produce high-quality, epi-ready GaN substrates.
Characterization and Results: The GaN substrates produced show excellent structural quality, with defect densities significantly lower than those found in GaN films grown on non-native substrates. The curvature of the substrates also meets the standards needed for device manufacturing.
Cost Analysis and Commercial Potential: A cost analysis suggests that the manufacturing of 100 mm and 150 mm freestanding GaN substrates could be achieved at a cost of under $1,000 per wafer, with the potential to reduce costs further with higher volume production.

In conclusion, the paper presents a promising approach to the large-scale production of high-quality GaN substrates, which is essential for the continued growth and commercialization of GaN-based electronics.