You are here: Home > News

Poly ALN-SiO2-SI Wafer--Towards Manufacturing Large Area GaN Substrates from QST® Seeds

Date: 2025-04-13 18:56:21     Hits: 33

Paper Download

Towards Manufacturing Large Area GaN Substrates from QST® Seeds.pdf

The paper titled "Towards Manufacturing Large Area GaN Substrates from QST® Seeds" discusses recent advancements in the production of large-area Gallium Nitride (GaN) substrates, focusing on the use of Qromis Substrate Technology (QST®) seeds. The authors explore the application of Hydride Vapor Phase Epitaxy (HVPE) for growing thick crystalline GaN on 150 mm QST® seeds, which are then processed to create freestanding 100 mm diameter GaN substrates. These developments are crucial for addressing the industry's demand for large-diameter GaN substrates, which are needed for high-performance GaN-based devices used in areas such as power electronics and optoelectronics.

To learn more, please click the following link:https://en.omedasemi.com/composite-wafer.html


Key points include:

  1. Challenges with Non-native Substrates: The paper highlights the challenges posed by current non-native substrates (such as sapphire and silicon) used for GaN growth, which cause lattice mismatches leading to defects in GaN films.

  2. QST® Technology: Qromis' QST® technology provides a thermal expansion match with GaN, facilitating the growth of thicker GaN layers on large diameter substrates. This makes it suitable for producing high-quality, freestanding GaN substrates.

  3. Manufacturing Process: The process involves growing GaN via HVPE on QST® substrates, followed by a seed removal technique that results in freestanding GaN crystals. The crystals are then subjected to wafering, grinding, cutting, and polishing to produce high-quality, epi-ready GaN substrates.

  4. Characterization and Results: The GaN substrates produced show excellent structural quality, with defect densities significantly lower than those found in GaN films grown on non-native substrates. The curvature of the substrates also meets the standards needed for device manufacturing.

  5. Cost Analysis and Commercial Potential: A cost analysis suggests that the manufacturing of 100 mm and 150 mm freestanding GaN substrates could be achieved at a cost of under $1,000 per wafer, with the potential to reduce costs further with higher volume production.

In conclusion, the paper presents a promising approach to the large-scale production of high-quality GaN substrates, which is essential for the continued growth and commercialization of GaN-based electronics.

linkinLinkin:
back to top 
close 
About Us

OMeda (Shanghai Omedasemi Co.,Ltd) was founded in 2021 by 3 doctors with more than 10 years of experience in nanpfabrication. It currently has 15 employees and has rich experience in nanofabrication (coating, lithography, etching, two-photon printing, bonding) and other processes. We support nanofabrication of 4/6/8-inch wafers.

Name *
E-mail *
Company name
Whatsapp / Phone
What can we contact you about *