Comparision between Trimmed MgO Doped LNOI Wafer and Normal MgO Doped LNOI Wafer

Today we want to show 2 kind of mgo doped lnoi wafer 

the spec of this two wafer is 500nm Xcut MgO LNOi -4.7umSiO2-675umSi

the left is trimmed mgo lnoi wafer and the right is mgo lnoi wafer without trimming . if you want to know about trimming ,please click this link  https://en.omedasemi.com/detail/205.html

in the following picture ,we can clear see that trimming process can improve the ln layer thcikness range from 143 A to 46.3A,

more uniform surface  can greatly improve production yield and also get better device performance.

Trimmed LN Layer :Avg LN Thickness:4992.4A,Range:46.3A          Without Trimmed LN Layer:Avg LN Thickness:5068A,Range143A

Trimmed MgO Doped LNOI                                                                Without Trimming ProcessTrimmed MgO Doped LNOI 

Trimmed LNOI