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Integration of Er3+ Emitters in Silicon-on-Insulator Nanodisk Metasurface

Date: 2025-10-05 14:20:24     Hits: 93

The paper discusses the integration of Er3+ emitters into Silicon-on-Insulator (SOI) nanodisk metasurfaces for enhanced photoluminescence (PL) efficiency, particularly at the telecom C-band (1535 nm). The study explores the interaction between erbium ions and the metasurfaces, which consist of closely spaced silicon nanodisks, to improve the collection efficiency of spontaneous emission from Er3+ transitions. The research covers both room-temperature (RT) and cryogenic conditions, demonstrating a maximum PL enhancement factor of 5 at RT. The paper also investigates the polarization, time-resolved PL, and lifetime properties of the emitted light. By analyzing Er3+ transition lines and utilizing photoluminescence excitation (PLE) spectroscopy, the team observed enhanced emission and polarization effects within the metasurfaces. The work highlights the potential of using CMOS-compatible metasurfaces to control and enhance the optical properties of Er3+ emitters for applications in integrated quantum photonics and telecom technologies.

Additionally, a fluorescence enhancement model was developed, showing a calculated improvement of 5.2 times in PL emission due to the metasurface's design. The findings suggest that SOI metasurfaces can be effectively used in future integrated quantum devices, with further improvements in metasurface design required for achieving greater emission control and efficiency.

The study opens opportunities for scalable and efficient light sources in the telecom band, integrated with quantum technologies, and proposes future research directions focusing on optimizing metasurface designs for better emitter interaction and enhanced optical properties .


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