4H SICOI Wafer--4H-SiC microring resonators for nonlinear integrated photonics

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High Q microresonators on 4H silicon carbide on insulator platform for nonlinear photonics.pdf

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The article titled **"High-Q Microresonators on 4H-Silicon-Carbide-on-Insulator Platform for Nonlinear Photonics"** explores the development of high-quality (Q) factor microresonators made from 4H-silicon-carbide-on-insulator (4H-SiCOI) material for nonlinear photonics applications. Key points include:

1. **High-Q Microresonators:** The study demonstrates the fabrication of high-Q microresonators on a 4H-SiCOI platform with an average Q factor of 6.75 × 10⁶, and a record-high Q factor of 7.1 × 10⁶. These high-Q resonators enable efficient confinement of light, crucial for enhancing nonlinear optical effects such as harmonic generation and frequency combs.

2. **Nonlinear Optical Processes:**

   - The researchers observed second, third, and fourth harmonic generation (SHG, THG, FHG) in these resonators, showcasing the potential for efficient light frequency conversion.

   - They also demonstrated cascaded Raman lasing for the first time in SiC microresonators, with threshold pump powers of 10 mW for the first-order and 14 mW for the second-order Raman lasing.

   - Kerr frequency comb generation covering a broad range from 1300 nm to 1700 nm was achieved at a low power threshold of 13 mW, indicating the potential of these devices for broadband optical communications.

3. **Fabrication Process:** The 4H-SiCOI platform was prepared using wafer-bonding and thinning techniques to create high-quality SiC layers on an insulator. The microresonators were fabricated with ultra-smooth surfaces using femtosecond laser machining followed by chemical-mechanical polishing (CMP), achieving a surface roughness of 0.1 nm.

4. **Applications:** These high-Q microresonators are promising for applications in nonlinear photonics, such as all-optical signal processing, frequency comb generation, and quantum photonics, thanks to their strong nonlinear properties and wide transparency window (0.37–5.6 μm).

In summary, the study highlights the 4H-SiCOI platform's potential for integrating electronics, nonlinear photonics, and quantum applications, offering a pathway to scalable, wafer-level photonic devices.