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LNOS(LN on Sapphire)-Wafer-A_Dispersion-Engineered_YX-LN_SIO2_Sapphire_SH-SAW_Resonator_for_Enhanced_Electromechanical_Coupling_and_Rayleigh_Mode_Suppression

Date: 2025-04-08 11:45:01     Hits: 46

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A_Dispersion-Engineered_YX-LN_SIO2_Sapphire_SH-SAW_Resonator_for_Enhanced_Electromechanical_Coupling_and_Rayleigh_Mode_Suppression.pdf

The article titled "A Dispersion-Engineered YX-LN/SIO2/Sapphire SH-SAW Resonator for Enhanced Electromechanical Coupling and Rayleigh Mode Suppression" explores an optimized design for a shear-horizontal surface acoustic wave (SH-SAW) resonator. The resonator utilizes a YX-LN/SiO2/Sapphire functional substrate to achieve enhanced electromechanical coupling (k_eff²) and suppress the unwanted Rayleigh SAW (R-SAW) mode.

Key points of the study include:

  1. Design and Performance: The proposed resonator enhances the electromechanical coupling, achieving a k_eff² of 47%, with a high quality factor (Q) of 1,000. The figure-of-merit (FoM), calculated as k_eff² × Q, reaches 470 at 1 GHz. This design also successfully mitigates the interference from the Rayleigh mode.

  2. Challenges in SAW Devices: Traditional surface acoustic wave (SAW) devices, although widely used in mobile communication systems, face challenges in meeting the requirements for emerging technologies such as 5G. These challenges include limited frequency bandwidth and the interference of Rayleigh waves in SH-SAW operation.

  3. Numerical Simulations and Design Strategy: Numerical simulations reveal that when the SH and Rayleigh modes are close, the electromechanical coupling undergoes significant variation. By adjusting the design, the researchers found ways to enhance the SH-SAW mode while suppressing the R-SAW, improving overall device performance.

  4. Applications: This improved resonator design has implications for next-generation communication systems, especially those requiring wide bandwidth and high performance, such as 5G networks.

The study demonstrates how dispersion-engineering techniques can be applied to improve the performance of SH-SAW devices, with promising applications in advanced signal processing and RF communication systems .



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