Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic/RF and memory applications

The presentation, "Atomic-layer-deposited atomically thin In2O3 channel for BEOL logic/RF and memory applications," covers advancements in the development of In2O3-based transistors using Atomic Layer Deposition (ALD). Key points include:

1. ALD In2O3 Transistors: The work demonstrates high-performance BEOL (Back-End-of-Line) compatible transistors with ultra-thin channels, down to 0.7 nm. These transistors show remarkable characteristics such as high electron mobility (up to 152 cm²/V·s), low contact resistance (< 0.1 Ω·mm), and high drain currents (up to 20 A/mm at 1.7 V VDS).

2. Mobility and Performance: In2O3 transistors outperform many other oxide semiconductors, achieving excellent I-V characteristics with sub-100 mV/dec subthreshold swing (SS), a key indicator of high-performance logic devices.

3. RF and Memory Applications: The ALD In2O3 RF transistors exhibit a cut-off frequency (fT) approaching 40 GHz, which is critical for high-frequency applications. Moreover, the work demonstrates Fe-FETs (Ferroelectric FETs) that have a memory window of 2.1 eV, retention times exceeding 10 years, and endurance above 10⁹ cycles, making them suitable for memory applications.

4. 3D Integration: In2O3 devices with Gate-All-Around (GAA) and FinFET structures are fabricated to explore the unique benefits of ALD for conformal deposition, which is ideal for 3D integration in future electronic systems.

5. Manufacturing and Reliability: The process is optimized for BEOL fabrication, maintaining low thermal budgets and demonstrating stability even after high-temperature annealing (up to 400°C). The devices show excellent reliability, making them suitable for monolithic 3D integration in logic, RF, and memory systems.

In conclusion, the ALD In2O3 transistors exhibit superior performance, scalability, and reliability, providing significant advantages for logic and memory applications, as well as RF technologies in the context of BEOL processes and 3D integration.