Research on the Fabrication of X-Cut Near Stoichiometric Lithium Niobate Wafers

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This article explores the fabrication of X-cut near-stoichiometric lithium niobate (NSLN) wafers using a diffusion method. The research focuses on creating these wafers without twins or cracks, utilizing a method that diffuses lithium ions from a Li-rich polycrystalline material into congruent lithium niobate (CLN) wafers at high temperatures. The diffusion process and the composition of the resulting NSLN wafers are carefully controlled to ensure high quality.

Key findings from the research include:

• The produced NSLN wafers exhibit superior piezoelectric properties, with an increase in the piezoelectric coefficient (d33) by 12% over congruent lithium niobate.

• The Curie temperature of NSLN wafers reaches 1198°C, indicating improved thermal stability.

• The UV absorption spectrum of NSLN wafers shows a blue shift of 10 nm compared to CLN, enhancing their suitability for UV applications.

• The refractive index of the NSLN wafers is higher and more uniform than that of CLN, making them ideal for electro-optic device fabrication.

The study also addresses challenges like eliminating microdomains and achieving a macroscopic single-domain state in the wafers, crucial for their electro-optic performance. Additionally, the article highlights the importance of controlling the Li/Nb ratio and diffusion conditions for obtaining the desired properties in the final NSLN wafers.

Overall, the diffusion method proves to be an effective technique for producing high-quality, near-stoichiometric lithium niobate wafers suitable for advanced electro-optic applications.